PART |
Description |
Maker |
CM400HB-90H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
|
Mitsubishi Electric Corporation
|
CM1200HA-34H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
|
Mitsubishi Electric Corporation
|
CM400DY-50H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
|
Mitsubishi Electric Corporation
|
CM400HG-66H |
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
|
Mitsubishi Electric Semiconductor Mitsubishi Electric Corporation
|
IRG4BC40K |
Insulated Gate Bipolar Transistors (IGBTs)(短路额定超快速绝缘栅型双极型晶体 绝缘门双极晶体管IGBTs)(短路额定超快速绝缘栅型双极型晶体管) INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.1V, @Vge=15V, Ic=25A) 600V UltraFast 8-25 kHz Discrete IGBT in a TO-220AB package
|
International Rectifier, Corp. IRF[International Rectifier]
|
2SK3712 |
High voltage: VDSS = 250 V Gate voltage rating: -30 V Built-in gate protection diode
|
TY Semiconductor Co., Ltd
|
AP28G40GEM-HF AP28G40GEM-HF-14 |
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR High Peak Current Capability
|
Advanced Power Electronics Corp. Advanced Power Electronics ...
|
AP30G120SW AP30G120SW-14 |
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR WITH FRD High Speed Switching
|
Advanced Power Electronics Corp. Advanced Power Electron...
|
IRGBC20K |
Aluminum Screw Terminal Permissable Abnormal Voltage Capacitor; Capacitance: 4700uF; Voltage: 400V; Case Size: 76.2x110 mm; Packaging: Bulk INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=6.0A)
|
IRF[International Rectifier]
|
IRGBC20K-S |
Aluminum Screw Terminal Permissable Abnormal Voltage Capacitor; Capacitance: 8200uF; Voltage: 400V; Case Size: 76.2x170 mm; Packaging: Bulk INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=6.0A)
|
IRF[International Rectifier]
|
IRGP420U GP420U |
Insulated Gate Bipolar Transistors (IGBTs)(瓒?揩???缂?????????朵?绠? 500V Discrete IGBT in a TO-3P (TO-247AC) package Insulated Gate Bipolar Transistors (IGBTs)(超快速绝缘栅型双极型晶体 绝缘门双极晶体管(IGBTs)(超快速绝缘栅型双极型晶体管)
|
International Rectifier, Corp.
|
NTE3322 NTE3321 |
Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch Insulated Gate Bipolar Transistor N-Channel Enhancement Mode High Speed Switch
|
NTE[NTE Electronics]
|